TY  - GEN
T1  - Strained silicon heterostructures materials and devices
A2  - Maiti, C. K.
A2  - Chakrabarti, N. B.
A2  - Ray, S. K. Dr
LA  - English
PP  - London, United Kingdom
PB  - Institution of Engineering and Technology
YR  - 2001
UL  - https://ds.mainlib.upd.edu.ph/Record/UP-99796217612476875
AB  - This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in silicon heterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.
SN  - 9781849191678 (e-ISBN)
KW  - Heterostructures.
KW  - Silicon.
KW  - Electronic books.
ER  -