Strain-induced effects in advanced MOSFETs

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor fil...

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Bibliographic Details

Main Author:	Sverdlov, Viktor
Corporate Author:	SpringerLink (Online service)
Format:	Electronic Resource
Language:	English
Published:	Vienna Springer Vienna 2011.
Series:	Computational microelectronics
Subjects:	Metal oxide semiconductor field-effect transistors. Strains and stresses. Electronic books.
Online Access:	Available for University of the Philippines Diliman via SpringerLink. Click here to access